FDT439N Description
This N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook puter power management, battery powered circuits, and DC motor...
FDT439N Key Features
- 6.3 A, 30 V
- Fast switching speed
- High power and current handling capability in a widely used surface
- This Device is Pb-Free